My order
Share to:  
Location：Home > Stock Inventory > Product Details

FDG316P MOSFET P-Channel -30V -1.6A 0.16ohm SOT-363 marking 36A

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-1.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.16Ω @-1.6A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--3V
耗散功率Pd
Power Dissipation		750mW/0.75W
Description & Applications• Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package.
描述与应用•低栅极电荷（3.5nC典型值） •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC70-6表面贴装封装
List of related models

Record / license number：粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00