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fdw262p-nl MOSFET P-Channel -20V -4.5A 0.037ohm Vth:-0.4--1.5V SOP-8 marking g27 262p

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-4.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.037Ω @-4.5A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4--1.5V
耗散功率Pd
Power Dissipation		1.3W
Description & Applications• RDS(ON) rated for use with 1.8 V logic • Low gate charge (13nC typical) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package
描述与应用 使用额定电压为1.8 V逻辑与 •低栅极电荷（13nC典型值） •高性能沟道技术极 低RDS（ON） •低调TSSOP-8封装
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