FKV660S MOSFET N-Channel 6A TO-263 marking FKV660S low gate chargefast switch/very low RDS|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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FKV660S MOSFET N-Channel 6A TO-263 marking FKV660S low gate chargefast switch/very low RDS

Model：FKV660S
Mark / screen / code / typing：FKV660S
Manufacturer：
Date Code：05+
Package：TO-263
Standard Package：
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage	60V
最大漏极电流Id Drain Current	6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.014Ω/Ohm 2.5A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.5V
耗散功率Pd Power Dissipation	6W
Description & Applications
描述与应用

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