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FKV660S MOSFET N-Channel 6A TO-263 marking FKV660S low gate chargefast switch/very low RDS

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Product description
最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage60V
最大漏极电流Id Drain Current6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.014Ω/Ohm 2.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.5V
耗散功率Pd Power Dissipation6W
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