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FMG6 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 100~600 300mW/0.3W SOT-153/SMT5/SC-74A/SOT23-5 marking G6 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA
Q1基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q1电阻比(R1/R2) Q1 Resistance Ratio
Q2基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
Q2电阻比(R1/R2) Q2 Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)100~600
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •General purpose(dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package
描述与应用特点 •通用(双数字晶体管) •两个DTC114T的芯片在EMT或UMT或SMT封装
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