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FMMT723TA PNP transistors(BJT) -100V -1A 200MHz 250 -210mV/-0.21V SOT-23 marking 723 low saturation voltage/low equivalent on-resistance

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-100V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−100V
集电极连续输出电流IC
Collector Current(IC)
-1A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
250
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-210mV/-0.21V
耗散功率Pc
PoWer Dissipation
625mW/0.625W
Description & ApplicationsPNP SILICON POWER (SWITCHING) TRANSISTORS FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)
描述与应用PNP硅POWER(开关)晶体管 特点 *功耗625mW * CONT IC 2.5A * IC高达10A峰值脉冲电流 *优秀HFE特性10A(脉冲) *极低的饱和电压 *具有极低的等效导通电阻
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