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FS30AS-06-T13 MOSFET N-Channel 60V 3A TO-252/D-PAK marking FS30 low gate chargefast switch/very low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.03Ω/Ohm @5A,10v |
| 开启电压Vgs(th) Gate-Source Threshold Voltage | 2.0-4.0v |
| 耗散功率Pd Power Dissipation | 3.5W |
| Description & Applications | • Drive voltage : 10 V • VDSS : 60 V • rDS(ON) (max) 30 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 65 ns |
| 描述与应用 | •驱动电压10 V •VDSS:60 V •RDS(ON)(最大值)30MΩ •ID:30 A •集成的快速恢复二极管(典型值):65纳秒 |
