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FSB660A PNP transistors(BJT) -60V -2A 75MHz 250~550 -300mV/-0.3V SOT-23/SC-59 marking 660A high current gain/low saturation voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−60V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
75MHz
直流电流增益hFE
DC Current Gain(hFE)
250~550
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous.
描述与应用低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达2A的连续。
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