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FZT757TA PNP transistors（BJT） -300V -500mA/-0.5A 30MHz 50 -500mV/-0.5V SOT-223 marking FZT757 low saturation voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -300V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −300V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 30MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 50 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES Low saturation voltage COMPLEMENTARY TYPE FZT657 |
| 描述与应用 | PNP硅平面高压晶体管 特点 低饱和电压 互补型FZT657 |
