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G2306 MOSFET N-Channel 20V 5.3A SOT-23/SC-59 marking 2306 low gate chargefast switch/very low RDS

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12v
最大漏极电流Id Drain Current5.3A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.03Ω/Ohm @5.5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.2V
耗散功率Pd Power Dissipation1.38W
Description & ApplicationsԦCapable of 2.5V gate drive ԦLower on-resistance ԦReliable and Rugged
描述与应用能够在2.5V栅极驱动 低导通电阻 可靠耐用
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