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GA1F4N NPN Bipolar Digital Transistor (BRT) 60V 100mA/0.1A 22k 47k gain85-230 SOT-323/SC-70 marking L35 medium speed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
电阻比(R1/R2) Resistance Ratio0.47
直流电流增益hFE DC Current Gain(hFE)85-230
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Medium speed switching resistor built-in TYPE NPN transistor Resistors built-in TYPE Comlementary to GN1F4N
描述与应用特性 中速开关电阻内置型NPN晶体管 电阻器内置型 对管是 GN1F4N
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