My order
Share to:  
Location:Home > Stock Inventory > Product Details

GN01010NQTD MESFET-N channel 6V 15mA-30mA SOT-143 marking 5AQ RF application/low noise

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage
6V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-4V
漏极电流(Vgs=0V)IDSS
Drain Current
15mA-30mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsGaAs MMICs. GaAs N-Channel MES IC. For high-output high-gain amplification. Features * General-use wide-band amplifier * Low noise * With bandwidth control pin
描述与应用砷化镓MMIC的。 N沟道MES砷化镓IC。 对于高输出高增益放大。 特点 *一般使用宽带放大器 *低噪音 *随着带宽控制引脚
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00