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GN1010-P MESFET-N channel 6V 5mA-20mA SOT-143 marking 5AP RF application/low noise
| 最大源漏极电压Vds Drain-Source Voltage | 6V |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -4V |
| 漏极电流(Vgs=0V)IDSS Drain Current | 5mA-20mA |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | |
| 耗散功率Pd Power Dissipation | 200mW/0.2W |
| Description & Applications | GaAs N-Channel MES For high-output high-gain amplification General-use wide-band amplifier Low noise With bandwidth control pin |
| 描述与应用 | 砷化镓N沟道MES 用于高输出的高增益放大 一般使用的宽带放大器 低噪音 随着带宽控制引脚 |
