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H7P1002DS90TR MOSFET P-Channel -100V -1.5A 0.0085ohm SOT-252 marking 7P1002

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-100V
最大栅源极电压Vgs(±)
Gate-Source Voltage		30V
最大漏极电流Id
Drain Current		-1.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.0085Ω @-7.5A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.0--2.5V
耗散功率Pd
Power Dissipation		3W
Description & Applications• Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source
描述与应用•低导通电阻 RDS（ON）=85MΩ（典型值）。 •低驱动电流 •4.5 V门驱动装置可以从5 V电源驱动
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