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HAT1089C MOSFET P-Channel -20V -2A 0.079ohm SOT-363 marking VK low drive current 2.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.079Ω @-1A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4--1.4V
耗散功率Pd
Power Dissipation		850mW/0.85W
Description & Applications• Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting
描述与应用•低导通电阻 RDS（ON）=79MΩ（典型值）。 （VGS=-4.5 V） •低驱动电流。 •2.5 V门驱动装置。 •高密度安装
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