My order
Share to:  
Location:Home > Stock Inventory > Product Details

HM5551 NPN Transistors(BJT) 180V 600mA/0.6a 300MHz 80~250 200mV/0.2V SOT-89 marking HM5551

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
180V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
160V
集电极连续输出电流IC
Collector Current(IC)
600mA/0.6A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
80~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV/0.2V
耗散功率Pc
Power Dissipation
1.2W
Description & ApplicationsNPN EPITAXIAL PLANAR TRANSISTOR The HM5551 is designed for general purpose applications requiring high breakdown voltages. High collector-emitter breakdown voltage. VCEO>160V(@IC=1mA) Complements to PNP type HM5401
描述与应用NPN外延平面晶体管 HM5551是专为一般用途的应用要求 高击穿电压。 高集电极 - 发射极击穿电压。 VCEO>160V(@ IC=1毫安), 互补PNP型HM5401
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00