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HMBT1815GLT1 NPN Transistors(BJT) 60V 150mA/0.15A 80MHz 200~400 250mV/0.25V SOT-23/SC-59 marking C4G generalswitch and amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
80MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
250mV/0.25V
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsNPN EPITAXIAL PLANAR TRANSISTOR The HMBT1815 is designed for use in driver stage of AF amplifier and general purpose amplification.
描述与应用NPN外延平面晶体管 专为通用开关和放大器应用。
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