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HN1B04FU-GR NPN+PNP Complex Bipolar Transistor 60V/-50V 150mA/-150mA HEF=200~400 SOT-363/US6 marking 1DG switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) 60V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) 50V/-50V
集电极连续输出电流IC Collector Current(IC) 150mA/-150mA
截止频率fT Transtion Frequency(fT) 150MHz/120MHz
直流电流增益hFE DC Current Gain(hFE) 200~400
管压降VCE(sat) Collector-Emitter Saturation Voltage 100mV/-100mV
耗散功率Pc Power Dissipation 200mW
Description & Applications Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Q1: • High voltage and high current : VCEO = 50V, IC = 150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: • High voltage and high current : VCEO = −50V, IC = −150mA (max) • High hFE : hFE = 120~400 • Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.) • Audio Frequency General Purpose Amplifier Applications
描述与应用 特点 •东芝晶体管的硅NPN外延型(PCT工艺)硅PNP外延式(PCT的进程) Q1: •高电压和高电流:VCEO=50V,IC =150mA(最小值) •高HFE:HFE=120〜400 •优异的线性度:(IC=0.1毫安)/ HFE(IC=2毫安)=0.95(典型值) Q2: •高电压和高电流:VCEO=-50V,IC=电流150mA(最大值) •高HFE:HFE=120〜400 •优秀的HFE线性:HFE(IC=-0.1毫安的)/ HFE(IC=-2毫安,)= 0.95(典型值) •音频通用放大器应用
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