HN1C05FE-A NPN+NPN Complex Bipolar Transistor 15V 400mA HEF=300~1000 SOT-563/ES6 marking FA switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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HN1C05FE-A NPN+NPN Complex Bipolar Transistor 15V 400mA HEF=300~1000 SOT-563/ES6 marking FA switch and digital circuit application

Model：HN1C05FE-A
Mark / screen / code / typing：FA
Manufacturer：
Date Code：0544+ 05+
Package：SOT-563/ES6
Standard Package：4000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	15V
V(BR) CEO Collector-Emitter Voltage	12V
Collector Current(IC)	0.4A
Transtion Frequency(fT)	130MHZ
DC Current Gain(hFE)	300~1000
VCE (sat) Collector-Emitter Saturation Voltage	0.25V
Power Dissipation （Pd）	0.1W
Description & Applications	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Low Frequency Amplifier Applications Muting Application Switching Application * Low Saturation Voltage: VCE(sat)(1)=15mV (Typ.) :@ IC = 10mA/ IB = 0.5mA * High Collector Current :IC=400mA(Max.)
Technical Documentation Download	Read Online

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