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HN2S02JE SBD Schottky Barrier Diodes 40V 100mA/0.1A 600mV/0.6V SOT-553/ESV marking A9 fast switch low forward voltage

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Product description
反向电压Vr
Reverse Voltage		40V
平均整流电流Io
AVerage Rectified Current		100mA/0.1A
最大正向压降VF
Forward Voltage(Vf) 		600mV/0.6V
最大耗散功率Pd
Power dissipation		100MW/0.1W
Description & Applications. High-speed Switching Applications . HN2S02JE is composed of two independent Schottky Barrier diodes. . Low forward voltage: VF (3) = 0.54V (typ.) . Low reverse current: IR = 5μA (max.)
描述与应用高速开关应用 HN2S02JE是由两个独立的肖特基二极管并排。 低正向电压VF（3）=0.54V（典型值） 低反向电流：IR=5μA（最大）
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