HN7G03FU-B FET+BJTComplex FET 20V -15V marking 8B SOT-363 power management drive、interface circuit|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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HN7G03FU-B FET+BJTComplex FET 20V -15V marking 8B SOT-363 power management drive、interface circuit

Model：HN7G03FU-B
Mark / screen / code / typing：8B
Manufacturer：
Date Code：03+
Package：SOT-363/US6/SC-88
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	MOSFET N-Channel
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	10V
源漏极导通电阻Rds Drain-Source On-State Resistance	100mA/0.1A
开启电压Vgs（th） Gate-Source Threshold Voltage	4Ω@ VGS = 2.5V, ID =10mA
耗散功率Pd Power Dissipation	50ms@VDS=3V，Id=10mA
Description & Applications
描述与应用	0.7V~1.3V

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