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HSMS-8202 SBD Schottky Barrier Diodes 4V 350mV/0.35V SOT-23/SC-59 marking 2R
| 反向电压Vr Reverse Voltage | 4V |
| 平均整流电流Io AVerage Rectified Current | |
| 最大正向压降VF Forward Voltage(Vf) | 350mV/0.35V |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | .These low cost microwave Schottky diodes are specifically designed for use at X/Ku-bands and are ideal for DBS and VSAT downconverter applications. • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss • Low RD • Surface Mount Microwave Schottky Mixer Diodes |
| 描述与应用 | 这些低成本的微波肖特基二极管是专为在X / KU频段使用，DBS和VSAT下变频器应用的理想选择。 •优化使用在10-14 GHz •低电容 •低转换损耗 •低RD •表面贴装微波肖特基混频二极管 |
