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IMH1 NPN+NPN Complex Bipolar Digital Transistor 50V 30mA 300mW/0.3W SOT-163/SMT6/SC-74 marking H1 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)30mA
Q1基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation300mW/0.3W
Description & ApplicationsFeatures •NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) •Built-In Biasing Resistors, R1 = R2= 22kW. •Two DTC124E chips in one package. •Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). •The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing lInner circuit of the input. They also have the advantage of completely eliminating parasitic effects. •Only the on/off conditions need to be set for operation, making the circuit design easy. •Lead Free/RoHS Compliant.
描述与应用特点 •NPN100毫安50V复杂的数字晶体管(内置偏置电阻晶体管) •内置偏置电阻R1= R2=22KW。 •两个DTC124E芯片在一个封装中。 •内置启用偏置电阻器的逆变器电路的配置,而无需连接外部输入电阻(见内部电路)。 •完全隔离允许负偏置lInner,电路的输入偏置电阻组成的薄膜电阻。他们也有优势,完全消除了寄生效应。 •只有开/关条件需要设置操作,使电路设计容易。 •无铅/ RoHS标准。
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