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IRF6618TR1 MOSFET N-Channel 30V 170A MT marking low gate chargefast switch/very low RDS

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current170A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.002Ω/Ohm @30A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.35V-2.35V
耗散功率Pd Power Dissipation2.8W
Description & ApplicationsHEXFETPower MOSFET Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount echniques
描述与应用HEXFET功率MOSFET 特殊应用的MOSFET 非常适于CPU核心的DC-DC转换器 低传导损耗 低开关损耗 薄型(<0.7毫米) 双面冷却双兼容 与现有的表面贴装echniques的兼容
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