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IRFR9010TR power MOSFET P-Channel -60V -5.3A 0.5ohm SOT-252 marking FR9010 fast switch
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±20V |
| 最大漏极电流Id Drain Current | -5.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.5Ω @-2.7A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -2.0--4.0V |
| 耗散功率Pd Power Dissipation | 25W |
| Description & Applications | P-CHANNEL POWER MOSFETS Lower Rds Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability |
| 描述与应用 | P沟道功率MOSFET 较低RDS 改进感性耐用 快速开关时间 细胞结构坚固的多晶硅栅 较低的输入电容 扩展安全工作区 改进高温可靠性 |
