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IRLR8103VTR MOSFET N-Channel 30V 9.1A TO-252/D-PAK marking LR8103V low on-resistance/Low drive current/high density mounting

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current9.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance6.9Ω/Ohm @15A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-3.0V
耗散功率Pd Power Dissipation115W
Description & Applications• N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current a pplications • 100% RG Tested • Lead-Free
描述与应用HEXFET功率MOSFET 高频同步降压 计算机处理器电源转换器 高频隔离DC-DC 同步整流转换器 电信和工业应用 •N沟道特定应用的MOSFET •非常适于CPU核心DC-DC转换器 •低传导损耗 •低开关损耗 •最大限度地减少并行 MOSFET的大电流 应用程序 •100%的Rg测试 •无铅
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