KRC829E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 200mW/0.2W SOT-563/TES6 marking VJ switching inverting interface driver circuit|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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KRC829E NPN+NPN Complex Bipolar Digital Transistor 50V 100mA 200mW/0.2W SOT-563/TES6 marking VJ switching inverting interface driver circuit

Model：KRC829E
Mark / screen / code / typing：VJ
Manufacturer：
Date Code：04+
Package：SOT-563/TES6
Standard Package：4000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	50V
V(BR) CEO Collector-Emitter Voltage	50V
Collector Current(IC)	0.1A
Input Resistance(R1)	47KΩ
Base-Emitter Resistance(R2)	22kΩ
Base-Emitter Input Resistance Ratio (R1/R2)	2.1
DC Current Gain(hFE)	70~140
Transtion Frequency(fT)	200MHZ
Power Dissipation （Pd）	0.2W
Description & Applications	EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
Technical Documentation Download	Read Online

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