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KTC2875-B NPN Transistors(BJT) 50V 300mA/0.3A 30MHz 350~1200 300mV/0.3V SOT-23/SC-59 marking MB muting and switch application

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
300mA/0.3A
截止频率fT
Transtion Frequency(fT)
30MHz
直流电流增益hFE
DC Current Gain(hFE)
350~1200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
150mW/0.15W
Description & ApplicationsFOR MUTING AND SWITCHING APPLICATION. FEATURES ·High Emitter-Base Voltage : VEBO=25V(Min.) ·High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) ·Low on Resistance : RON=1Ω(Typ.), (IB=6mA)
描述与应用静音和开关应用。 特点 ·高发射极 - 基极电压VEBO= 25V(最小值) ·高反向HFE 反向HFE=150(典型值)(VCE=2V,IC=-2MA) ·低导通电阻RON=1Ω(典型值),(IB=6mA)
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