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L8050QLT1 NPN Transistors(BJT) 40V 800mA/0.8A 100~600 500mV/0.5V SOT-23/SC-59 marking 1Y

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
800mA/0.8A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
100~600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsHigh current capacity in compact package. IC = 0.8A. Epitaxial planar type. NPN complement: L8050 Pb-Free Package is available.
描述与应用高电流容量,在紧凑的封装。       IC=0.8A。 外延平面型。 NPN补充:L8050 无铅封装。
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