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L9012QLT1 PNP transistors(BJT) -40V -500mA/-0.5A 150~300 -600mV/-0.6V SOT-23/SC-59 marking 1YA

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−20V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
150~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−600mV/-0.6V
耗散功率Pc
PoWer Dissipation
225mW/0.225W
Description & ApplicationsPNP epitaxial planar transistor General Purpose Transistors FEATURES We declare that the material of product compliance with RoHS requirements.
描述与应用PNP外延平面晶体管 通用晶体管 特点 我们声明,产品符合RoHS要求的材料。
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