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MCH6601 Complex FET -30V -200mA/-0.2A SOT-363/SC70-6/MCPH6 marking FA ultra high-speed switch 1.5V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-10V
最大漏极电流Id
Drain Current
-200mA/-0.2A
源漏极导通电阻Rds
Drain-Source On-State Resistance
54Ω@ VGS = -1.5V, ID = -1mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.4~-1.4V
耗散功率Pd
Power Dissipation
800mW/0.8W
Description & ApplicationsGeneral-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package
描述与应用通用开关设备应用 特点 •低导通电阻。 •超高速开关。 •1.5V驱动。 •一个单一的包装中包含的2MOSFET的复合型
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