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MGF4917C MESFET-N channel -3V 10mA-60mA -0.1V -- -1.5V GD-16 marking CH RF application/low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-3V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-3V
漏极电流(Vgs=0V)IDSS
Drain Current
10mA-60mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.1V -- -1.5V
耗散功率Pd
Power Dissipation
50mW
Description & ApplicationsType carrier super low noise GaAs FET X to K band low noise amplifiers and oscillators Low noise figure High associated gain
描述与应用超低噪音型载体砷化镓 场效应管 X到K波段低噪声放大器和振荡器 低噪声系数 高相关增益
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