MGF4917C MESFET-N channel -3V 10mA-60mA -0.1V -- -1.5V GD-16 marking CH RF application/low noise|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MGF4917C MESFET-N channel -3V 10mA-60mA -0.1V -- -1.5V GD-16 marking CH RF application/low noise

Model：MGF4917C
Mark / screen / code / typing：CH
Manufacturer：
Date Code：05+ 05+
Package：GD-16
Standard Package：500
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-3V
栅源极击穿电压V(BR)GS Gate-Source Voltage	-3V
漏极电流(Vgs=0V)IDSS Drain Current	10mA-60mA
关断电压Vgs(off) Gate-Source Cut-off Voltage	-0.1V -- -1.5V
耗散功率Pd Power Dissipation	50mW
Description & Applications	Type carrier super low noise GaAs FET X to K band low noise amplifiers and oscillators Low noise figure High associated gain
描述与应用	超低噪音型载体砷化镓场效应管 X到K波段低噪声放大器和振荡器低噪声系数高相关增益

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