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MGF4917C MESFET-N channel -3V 10mA-60mA -0.1V -- -1.5V GD-16 marking CH RF application/low noise
最大源漏极电压Vds Drain-Source Voltage | -3V |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -3V |
漏极电流(Vgs=0V)IDSS Drain Current | 10mA-60mA |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.1V -- -1.5V |
耗散功率Pd Power Dissipation | 50mW |
Description & Applications | Type carrier super low noise GaAs FET X to K band low noise amplifiers and oscillators Low noise figure High associated gain |
描述与应用 | 超低噪音型载体砷化镓 场效应管 X到K波段低噪声放大器和振荡器 低噪声系数 高相关增益 |