MGSF3441VT1 MOSFET P-Channel 20V 300mA/0.3A 0.078ohm SOT-163 marking PT T-MOSsingle P channel|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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MGSF3441VT1 MOSFET P-Channel 20V 300mA/0.3A 0.078ohm SOT-163 marking PT T-MOSsingle P channel

Model：MGSF3441VT1
Mark / screen / code / typing：PT
Manufacturer：
Date Code：05+ 05+
Package：SOT-163/SOT23-6/TSOP-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V
最大漏极电流Id Drain Current	-0.3A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.078 @-3A,-4.5V
开启电压Vgs（th） Gate-Source Threshold Voltage	0.45V
耗散功率Pd Power Dissipation	2W
Description & Applications	low Rds small-signal MOSFETs TMOS single P-CHANNEL field effect transistors Low Rds provides higher efficienccy and extends battery life miniature TSOPE6 surface mount package saves board space
描述与应用	低Rds小信号MOSFET TMOS单P沟道场效应晶体管低RDS提供了更高的的efficienccy，并延长电池寿命 TSOPE6微型表面贴装封装，节省了电路板空间

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