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MGSF3441VT1 MOSFET P-Channel 20V 300mA/0.3A 0.078ohm SOT-163 marking PT T-MOSsingle P channel
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -0.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.078 @-3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.45V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | low Rds small-signal MOSFETs TMOS single P-CHANNEL field effect transistors Low Rds provides higher efficienccy and extends battery life miniature TSOPE6 surface mount package saves board space |
| 描述与应用 | 低Rds小信号MOSFET TMOS单P沟道 场效应晶体管 低RDS提供了更高的的efficienccy，并延长电池寿命 TSOPE6微型表面贴装封装，节省了电路板空间 |
