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MMBT200 PNP transistors（BJT） -60V -500mA/-0.5A 250MHz 100~350 -400mV/-0.4V SOT-23/SC-59 marking N2 amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | 250MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~350 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率Pc PoWer Dissipation | 350mW/0.35W |
| Description & Applications | PNP epitaxial planar transistor PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA |
| 描述与应用 | PNP外延平面晶体管 PNP通用放大器 此装置是专为通用放大器应用在集电极电流300毫安而设计 |
