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MMBT3640 PNP transistors（BJT） -12V -200mA/-0.2A 500MHz 30~120 -600mV/-0.6V SOT-23/SC-59 marking 2J switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -12V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流IC Collector Current(IC) | −200mA/-0.2A |
| 截止频率fT Transtion Frequency(fT) | 500MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 30~120 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. |
| 描述与应用 | PNP外延平面晶体管 PNP开关晶体管 该设备是专为非常高的速度饱和集电极电流为100 mA开关。 |
