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MMBT6517 NPN Transistors(BJT) 350V 500mA/0.5A 20~200 300mV/0.3V SOT-23/SC-59 marking 1Z high voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
350V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
350V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
20~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsHigh Voltage Transistor NPN Silicon
描述与应用高电压晶体管 NPN硅
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