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MMJT9435T1 PNP transistors（BJT） -45V -3A 110MHz 220 -550mV/-0.55V SOT-223/TO-261AA marking 9435 high DC current gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -45V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 110MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 220 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率Pc PoWer Dissipation | 1.56W |
| Description & Applications | Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • High DC Current Gain • Low Collector −Emitter Saturation Voltage • SOT−223 Surface Mount Packaging |
| 描述与应用 | 双极功率晶体管PNP硅 特点 •无铅包可用 •高直流电流增益 •低集电极 - 发射极饱和电压 •SOT-223表面贴装包装 |
