MSB710-RT1 PNP transistors（BJT） -60V -500mA/-0.5A 120~240 -600mV/-0.6V SOT-23/SC-59 marking CR amplifier|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MSB710-RT1 PNP transistors（BJT） -60V -500mA/-0.5A 120~240 -600mV/-0.6V SOT-23/SC-59 marking CR amplifier

Model：MSB710-RT1
Mark / screen / code / typing：CR
Manufacturer：
Date Code：05+9KNOPB 05+NOPB50
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	-60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	−50V
集电极连续输出电流IC Collector Current(IC)	−500mA/-0.5A
截止频率fT Transtion Frequency(fT)
直流电流增益hFE DC Current Gain(hFE)	120~240
管压降VCE（sat） Collector-Emitter SaturationVoltage	−600mV/-0.6V
耗散功率Pc PoWer Dissipation	200mW/0.2W
Description & Applications	PNP silicon general purpose amplifier Transistor
描述与应用	PNP硅通用晶体管放大器

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