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MT3S05AFS NPN Transistors(BJT) fSM marking 2
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
| 集电极连续输出电流IC Collector Current(IC) | 40mA |
| 截止频率fT Transtion Frequency(fT) | 4.5GHZ |
| 直流电流增益hFE DC Current Gain(hFE) | 80~140 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 80mW |
| Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type . * VHF~UHF Band Low-Noise Amplifier Applications * VHF~UHF Band Oscillator Applications * Superior performance in oscillator applications * Superior noise characteristics: NF = 1.4 dB, |S21e|2= 8.5 dB (f = 1 GHz) |
| 描述与应用 | 东芝晶体管NPN硅外延平面型。 * VHF??UHF频段低噪声放大器应用 * VHF??UHF频带振荡器应用 *振荡器应用中的卓越性能 *卓越的噪声特性：NF=1.4，S21E|2= 8.5（F =1GHZ） |
