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MT6L74FS NPN+NPN Complex Bipolar Transistor 10V/13V 25mA/80mA 12GHZ/8.5GHZ 70~140/110~160 SOT-563/ES6 marking 51 switch and digital circuit application

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Product description

V(BR)CBO Collector-Base Voltage(VCBO)


Collector-Emitter Voltage(VCEO) Q1/Q2 5V/6V
Collector Current(IC) Q1/Q2 25mA/80mA

 DC Current Gain(hFE)


 Transtion Frequency(fT) Q1/Q2 12000MHz/8500MHz
Pc Power Dissipation 0.1W
Description & Applications Features • TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE • It exsels in the buffer and oscillation use. • Two devices are built in to the fine pich small mold package (6pins):fs6 • VHF~UHF Band Low-Noise Amplifier Applications
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