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MT6L74FS NPN+NPN Complex Bipolar Transistor 10V/13V 25mA/80mA 12GHZ/8.5GHZ 70~140/110~160 SOT-563/ES6 marking 51 switch and digital circuit application
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V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
10V/13V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 5V/6V |
| Collector Current(IC) Q1/Q2 | 25mA/80mA |
|
DC Current Gain(hFE) Q1/Q2 |
70~140/110~160 |
| Transtion Frequency(fT) Q1/Q2 | 12000MHz/8500MHz |
| Pc Power Dissipation | 0.1W |
| Description & Applications | Features • TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE • It exsels in the buffer and oscillation use. • Two devices are built in to the fine pich small mold package (6pins):fs6 • VHF~UHF Band Low-Noise Amplifier Applications |
