Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
MTM861240L MOSFET P-Channel -20V -2A 0.1ohm SOT-563 marking DM power MOSFET small package
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | -2A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.1Ω @-1A,-4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.4--1.3V |
耗散功率Pd Power Dissipation | 540mW/0.54W |
Description & Applications | P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Small Package Outline Surface Mount Device |
描述与应用 | P沟道增强模式 功率MOSFET 简单的驱动要求 小封装 表面贴装设备 |