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NDS352P MOSFET P-Channel -20V 850mA 0.46ohm SOT-23 marking 352

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-850mA/-0.85A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.46Ω @-800mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--2.5V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsProprietary package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) .Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package.
描述与应用专有包装设计采用铜引线框架的 卓越的热性能和电气性能。 高密度电池设计极低的RDS(ON) 卓越的导通电阻和最大DC电流能力。 紧凑型工业标准SOT-23表面贴装封装
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