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nesg2021m05-t1 NPN Transistors(BJT) 13V 35mA 20Mhz~25Mhz 130~260 sot-343 marking T1G high frequency transistor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
13V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
5V
集电极连续输出电流IC
Collector Current(IC)
35mA
截止频率fT
Transtion Frequency(fT)
20Mhz~25Mhz
直流电流增益hFE
DC Current Gain(hFE)
130~260
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
175mW/0.175W
Description & Applications•NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz • LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance • Pb Free
描述与应用•NEC的NPN硅锗高频三极管 高击穿电压的SiGe技术 VCEO= 5 V(绝对最大值) •低噪声系数: NF= 0.9 dB,在2吉赫  NF= 1.3 dB,在5.2 GHz的 •最大稳定增益: MSG =22.5分贝在2 GHz •超薄M05包装: SOT-343的足迹,与仅为0.59毫米的高度  单位领导风格更好RF性能 •无铅
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