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NSB9435T1 PNP transistors（BJT） -40V -3A 110MHz 220 -550mV/-0.55V SOT-223/TO-261AA marking 9435R high current bias resistor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 110MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 220 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率Pc PoWer Dissipation | 3W |
| Description & Applications | High Current Bias Resistor Transistor PNP Silicon High DC Current Gain Low Collector –Emitter Saturation Voltage SOT–223 Surface Mount Packaging |
| 描述与应用 | 高电流偏置电阻晶体管PNP硅 高DC电流增益 低集电极 - 发射极饱和电压 SOT-223表面贴装包装 |
