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NTF2955T1 MOSFET P-Channel -60V -2.6A 0.145ohm SOT-223 marking 2955 low on-resistance high avalanche

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-2.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.145Ω @-750mA,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-2.0--4.0V
耗散功率Pd
Power Dissipation		2.8W
Description & ApplicationsFeatures • TMOS7 Design for low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes
描述与应用•TMOS7设计低RDS（on） •可承受高能量雪崩和减刑模式
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