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NTHD4N02FT1 MOSFET-N+SBD SOT23-8 MARKING C2L

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Product description
MOSFET TYPE  N-Channel
MOS Drain-Source Voltage (Vds)  40V

Vgs(±)

MOS Gate-Source Voltage

  12V
MOS Drain Current  （Id）  4.2A

Rds(on)

MOS Drain-Source On-State Resistance

  RDS(on) = 75 m @ Vgs = 4.5 V
RDS(on) = 143 m @ Vgs = 2.5 V

Vgs(th)

MOS Gate-Source Threshold Voltage

  0.6V
DIODES TYPE  sbd
DIODE Reverse Voltage  (Vr)  20v
DIODE Average Rectified Current (Io)  1a
DIODE Forward Voltage(Vf)  0.365V
Power Dissipation (Pd)  2.1W
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