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NTHS5445T1 MOSFET P-Channel -8V -5.2A 62mohm Vth:-0.45V 1206-8 marking A5 low on-resistance portable equipment application

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-8V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-8V
最大漏极电流Id
Drain Current
-5.2A/-0.2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
62mΩ@ VGS = -1.8V, ID = -2.0A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
1.3W
Description & ApplicationsPower MOSFET P-Channel Chip FET Features • Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Applications • Power Management in Portable and Battery–Powered Products; i.e.,Cellular and Cordless Telephones and PCMCIA Cards
描述与应用功率MOSFET的P-通道芯片FET 特点 •低的RDS(on) •更高的效率延长电池寿命 •逻辑电平栅极驱动器 •微型ChipFET表面贴装封装 应用 •电源管理在便携式和电池供电的产品,也就是说,蜂窝电话和无绳电话和PCMCIA卡
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