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PBSS4350D NPN Transistors(BJT) 60V 3A 100MHz 200 90mV~290mV SOT-163/SOT457 marking 43

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
90mV~290mV
耗散功率Pc
Power Dissipation
750mW/0.75W
Description & ApplicationsNPN transistor FEATURES • High current capabilities • Low VCEsat . APPLICATIONS • Heavy duty battery powered equipment (Automotive, Telecom and Audio/Video) such as motor and lamp drivers • VCEsat critical applications such as the latest low supply voltage IC applications • All battery driven equipment to save battery power. DESCRIPTION NPN low VCEsat transistor in a SC-74 plastic package.
描述与应用NPN晶体管 特点 •高电流能力 •低VCESAT 。 应用 •重型电池供电设备(汽车, 电信与音频/视频)电机和照明等 司机 VCE监测的关键应用,如最新的低电源 电压IC应用 •所有电池驱动的设备,以节省电池电力。 说明 NPN低VCEsat  在SC-74塑料封装晶体管。
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