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PHD66NQ03LT MOSFET N-Channel 25V 66A SOT-428/TO-252/D-PAK marking PHD66NQ03L avalanche energy/Fast switching
| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 25V |
| 最大漏极电流Id Drain Current | 66A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 93W |
| Description & Applications | TrenchMOS™ Logic Level FET N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Low on-state resistance Fast switching. |
| 描述与应用 | TrenchMOS™逻辑电平FET N沟道逻辑电平场效应功率晶体管在一个塑料包装使用 的TrenchMOS™技术。 低通态电阻 快速切换 |
