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PMV117EN MOSFET N-Channel 30V 2.5A SOT-23/SC-59 marking WM1 low RDS/high saturation current capability
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 2.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | µTrenchMOS™ enhanced logic level FET General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology Logic level threshold Very fast switching Low threshold voltage Surface-mounted package |
| 描述与应用 | μTrenchMOS™增强逻辑电平FET 一般说明 逻辑电平N沟道增强型场效应晶体管（FET）在一个塑料 包装使用TrenchMOS™技术 逻辑电平阈值 开关速度非常快 低阈值电压 表面贴装封装 |
