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PMV65XP MOSFET P-Channel -20V -4.3A 0.065ohm SOT-23 marking WM9 low threshold voltage low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -4.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.065Ω @-1A,-4.7V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.47--0.9 |
| 耗散功率Pd Power Dissipation | 480mW/0.48W |
| Description & Applications | 20 V, single P-channel Trench MOSFET Low threshold voltage Low on-state resistance Trench MOSFET technology |
| 描述与应用 | 20 V，单P沟道沟道MOSFET 低阈值电压 低通态电阻 沟道MOSFET技术 |
